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TPS1101DG4|TI|simage
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MOSFETs

TPS1101DG4

Trans MOSFET P-CH Si 15V 2.3A 8-Pin SOIC Tube

Texas Instruments

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Unconfirmed
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    15
  • Maximum Gate-Source Voltage (V)
    2
  • Maximum Gate Threshold Voltage (V)
    1.5
  • Maximum Continuous Drain Current (A)
    2.3
  • Maximum Drain-Source Resistance (mOhm)
    90(Typ)@10V
  • Typical Gate Charge @ Vgs (nC)
    11.25@10V
  • Typical Gate Charge @ 10V (nC)
    11.25
  • Typical Gate to Drain Charge (nC)
    2.6
  • Typical Gate to Source Charge (nC)
    1.5
  • Maximum Power Dissipation (mW)
    791
  • Typical Fall Time (ns)
    13
  • Typical Rise Time (ns)
    5.5
  • Typical Turn-Off Delay Time (ns)
    19
  • Typical Turn-On Delay Time (ns)
    6.5
  • Minimum Operating Temperature (°C)
    -40
  • Maximum Operating Temperature (°C)
    125
  • Packaging
    Tube
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    90@10V|134@4.5V|198@3V|232@2.7V
  • Mounting
    Surface Mount
  • Package Height
    1.5(Max)
  • Package Width
    3.9
  • Package Length
    4.91
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC
  • Pin Count
    8
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources