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MOSFETs

TPN7R506NH,L1Q(M

Trans MOSFET N-CH Si 60V 53A 8-Pin TSON EP Advance T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    53
  • Maximum Drain-Source Resistance (mOhm)
    7.5@10V
  • Typical Gate Charge @ Vgs (nC)
    22@10V
  • Typical Gate Charge @ 10V (nC)
    22
  • Typical Input Capacitance @ Vds (pF)
    1410@30V
  • Maximum Power Dissipation (mW)
    1900
  • Typical Fall Time (ns)
    5.6
  • Typical Rise Time (ns)
    5.7
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.85
  • Package Width
    3.1
  • Package Length
    3.1
  • PCB changed
    8
  • Standard Package Name
    SON
  • Supplier Package
    TSON EP Advance
  • Pin Count
    8
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources