Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
100
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
66
Maximum Drain-Source Resistance (mOhm)
11.5@10V
Typical Gate Charge @ Vgs (nC)
12@4.5V|24@10V
Typical Gate Charge @ 10V (nC)
24
Typical Input Capacitance @ Vds (pF)
1425@50V
Maximum Power Dissipation (mW)
2670
Typical Fall Time (ns)
6
Typical Rise Time (ns)
6
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
9.8@10V|13.3@4.5V
Mounting
Surface Mount
Package Height
0.85 mm
Package Width
3.1 mm
Package Length
3.1 mm
PCB changed
8
Standard Package Name
SON
Supplier Package
TSON EP Advance
Pin Count
8