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TPHR9003NL1LQ|TOSHIBA|simage
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MOSFETs

TPHR9003NL1,LQ

Trans MOSFET N-CH Si 30V 320A 8-Pin SOP Advance(N) T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    320
  • Maximum Drain-Source Resistance (mOhm)
    0.9@10V
  • Typical Gate Charge @ Vgs (nC)
    32@4.5V|74@10V
  • Typical Gate Charge @ 10V (nC)
    74
  • Typical Input Capacitance @ Vds (pF)
    5300@15V
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    15
  • Typical Rise Time (ns)
    9.6
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1
  • Package Width
    5.75
  • Package Length
    4.9
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOP Advance(N)
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources