Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single Quad Drain Triple Source
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.4
Operating Junction Temperature (°C)
175
Maximum Continuous Drain Current (A)
246
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
1.24@10V
Typical Gate Charge @ Vgs (nC)
34@4.5V|74@10V
Typical Gate Charge @ 10V (nC)
74
Typical Gate to Drain Charge (nC)
17
Typical Gate to Source Charge (nC)
16
Typical Reverse Recovery Charge (nC)
46
Typical Switch Charge (nC)
17
Typical Input Capacitance @ Vds (pF)
5500@20V
Typical Reverse Transfer Capacitance @ Vds (pF)
93@20V
Minimum Gate Threshold Voltage (V)
1.4
Typical Output Capacitance (pF)
1300
Maximum Power Dissipation (mW)
3000
Typical Fall Time (ns)
10
Typical Rise Time (ns)
13
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
1@10V|1.5@4.5V
Maximum Positive Gate-Source Voltage (V)
20
Maximum Power Dissipation on PCB @ TC=25°C (W)
3000
Maximum Pulsed Drain Current @ TC=25°C (A)
500
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
156
Typical Reverse Recovery Time (ns)
46
Maximum Diode Forward Voltage (V)
1.2
Maximum Gate Resistance (Ohm)
1.1
Mounting
Surface Mount
Package Height
0.95
Package Width
5
Package Length
5
PCB changed
8
Standard Package Name
SO
Supplier Package
SOP Advance
Pin Count
8