Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Obsolete
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Dual Dual Drain
Channel Mode
Enhancement
Channel Type
P|N
Number of Elements per Chip
2
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Continuous Drain Current (A)
5.3@P Channel|6.1@N Channel
Maximum Drain-Source Resistance (mOhm)
43@10V@P Channel|32@10V@N Channel
Typical Gate Charge @ Vgs (nC)
24@10V@P Channel|14@10V@N Channel
Typical Gate Charge @ 10V (nC)
24@P Channel|14@N Channel
Typical Input Capacitance @ Vds (pF)
1105@10V@P Channel|850@10V@N Channel
Maximum Power Dissipation (mW)
1500
Typical Fall Time (ns)
33@P Channel|2.3@N Channel
Typical Rise Time (ns)
8.1@P Channel|2@N Channel
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Mounting
Surface Mount
Package Height
1.52 mm
Package Width
3.9 mm
Package Length
4.9 mm
PCB changed
8
Standard Package Name
SO
Supplier Package
SOP
Pin Count
8
Lead Shape
Gull-wing