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TN0110N3G|MICROCHP|limage
TN0110N3G|MICROCHP|simage
MOSFETs

TN0110N3-G

Trans MOSFET N-CH Si 100V 0.35A 3-Pin TO-92 Bag

Microchip Technology
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    100
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    0.35
  • Maximum Drain-Source Resistance (mOhm)
    3000@10V
  • Typical Input Capacitance @ Vds (pF)
    50@25V
  • Maximum Power Dissipation (mW)
    1000
  • Typical Fall Time (ns)
    3
  • Typical Rise Time (ns)
    3
  • Typical Turn-Off Delay Time (ns)
    6
  • Typical Turn-On Delay Time (ns)
    2
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Bag
  • Mounting
    Through Hole
  • Package Height
    5.33(Max)
  • Package Width
    4.19(Max)
  • Package Length
    5.21(Max)
  • PCB changed
    3
  • Standard Package Name
    TO
  • Supplier Package
    TO-92
  • Pin Count
    3
  • Lead Shape
    Formed

Documentation and Resources

Datasheets
Design resources