MOSFETs

TK8S06K3L(T6L1,NQ)

Trans MOSFET N-CH Si 60V 8A Automotive AEC-Q101 3-Pin(2+Tab) DPAK+ T/R

Toshiba

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  8541.29.00.55

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  60

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Continuous Drain Current (A)

  8

• Maximum Drain-Source Resistance (mOhm)

  54@10V

• Typical Gate Charge @ Vgs (nC)

  10@10V

• Typical Gate Charge @ 10V (nC)

  10

• Typical Input Capacitance @ Vds (pF)

  400@10V

• Maximum Power Dissipation (mW)

  25000

• Typical Fall Time (ns)

  4

• Typical Rise Time (ns)

  7

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Packaging

  Tape and Reel

• Mounting

  Surface Mount

• Package Height

  2.3

• Package Width

  5.5

• Package Length

  6.5

• PCB changed

  2

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  DPAK+

• Pin Count

  3

• Lead Shape

  Gull-wing