MOSFETs

TK5Q60W,S1VQ

Trans MOSFET N-CH Si 600V 5.4A 3-Pin(3+Tab) IPAK Tube

Toshiba

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Unconfirmed

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Material

  Si

• Configuration

  Single

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  600

• Maximum Gate-Source Voltage (V)

  ±30

• Maximum Gate Threshold Voltage (V)

  3.7

• Maximum Continuous Drain Current (A)

  5.4

• Maximum Gate-Source Leakage Current (nA)

  1000

• Maximum IDSS (uA)

  10

• Maximum Drain-Source Resistance (mOhm)

  900@10V

• Typical Gate Charge @ Vgs (nC)

  10.5@10V

• Typical Gate Charge @ 10V (nC)

  10.5

• Typical Input Capacitance @ Vds (pF)

  380@300V

• Maximum Power Dissipation (mW)

  60000

• Typical Fall Time (ns)

  7

• Typical Rise Time (ns)

  18

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  6.1

• Package Width

  2.3

• Package Length

  6.65(Max)

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  IPAK

• Pin Count

  3