Arrow Electronic Components Online
TK5P60WRVQ|TOSHIBA|simage
TK5P60WRVQ|TOSHIBA|limage
MOSFETs

TK5P60W,RVQ

Trans MOSFET N-CH Si 600V 5.4A 3-Pin(2+Tab) DPAK T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active-Unconfirmed
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Continuous Drain Current (A)
    5.4
  • Maximum Drain-Source Resistance (mOhm)
    900@10V
  • Typical Gate Charge @ Vgs (nC)
    10.5@10V
  • Typical Gate Charge @ 10V (nC)
    10.5
  • Typical Input Capacitance @ Vds (pF)
    380@300V
  • Maximum Power Dissipation (mW)
    60000
  • Typical Fall Time (ns)
    7
  • Typical Rise Time (ns)
    18
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    2.3
  • Package Width
    6.1
  • Package Length
    6.6
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    DPAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources