Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
40
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
2.4
Maximum Continuous Drain Current (A)
82
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
3.1@10V
Typical Gate Charge @ Vgs (nC)
29.7@4.5V|63.4@10V
Typical Gate Charge @ 10V (nC)
63.4
Typical Input Capacitance @ Vds (pF)
4670@20V
Maximum Power Dissipation (mW)
36000
Typical Fall Time (ns)
27
Typical Rise Time (ns)
12
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tube
Mounting
Through Hole
Package Height
15 mm
Package Width
4.5 mm
Package Length
10 mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220SIS
Pin Count
3