Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Process Technology
DTMOSIV-H
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
600
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
3.5
Maximum Continuous Drain Current (A)
38.8
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
65@10V
Typical Gate Charge @ Vgs (nC)
85@10V
Typical Gate Charge @ 10V (nC)
85
Typical Input Capacitance @ Vds (pF)
4100@300V
Maximum Power Dissipation (mW)
270000
Typical Fall Time (ns)
6
Typical Rise Time (ns)
35
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Mounting
Through Hole
Package Height
20.95
Package Width
5.02
Package Length
15.94
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole