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TK25V60XLQ|TOSHIBA|simage
TK25V60XLQ|TOSHIBA|limage
MOSFETs

TK25V60X,LQ

Trans MOSFET N-CH Si 600V 25A 5-Pin DFN EP T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    3.5
  • Maximum Continuous Drain Current (A)
    25
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    10
  • Maximum Drain-Source Resistance (mOhm)
    135@10V
  • Typical Gate Charge @ Vgs (nC)
    40@10V
  • Typical Gate Charge @ 10V (nC)
    40
  • Typical Input Capacitance @ Vds (pF)
    2400@300V
  • Maximum Power Dissipation (mW)
    180000
  • Typical Fall Time (ns)
    4
  • Typical Rise Time (ns)
    15
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.85
  • Package Width
    8
  • Package Length
    8
  • PCB changed
    5
  • Supplier Package
    DFN EP
  • Pin Count
    5

Documentation and Resources

Datasheets
Design resources