Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
65
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
30@10V
Typical Gate Charge @ Vgs (nC)
90@10V
Typical Gate Charge @ 10V (nC)
90
Typical Gate to Drain Charge (nC)
34
Typical Gate to Source Charge (nC)
23
Typical Reverse Recovery Charge (nC)
520
Typical Input Capacitance @ Vds (pF)
5100@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
210@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
480
Maximum Power Dissipation (mW)
3750
Typical Fall Time (ns)
200
Typical Rise Time (ns)
220
Typical Turn-Off Delay Time (ns)
45
Typical Turn-On Delay Time (ns)
24
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Maximum Pulsed Drain Current @ TC=25°C (A)
140
Typical Diode Forward Voltage (V)
1
Typical Reverse Recovery Time (ns)
130
Maximum Diode Forward Voltage (V)
1.5
Minimum Gate Resistance (Ohm)
0.5
Maximum Gate Resistance (Ohm)
3.3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
4.83(Max)
Package Width
9.65(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
D2PAK
Pin Count
3
Order Quantity