Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3
Operating Junction Temperature (°C)
-55 to 175
Maximum Continuous Drain Current (A)
110
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
6.9@10V
Typical Gate Charge @ Vgs (nC)
230@10V
Typical Gate Charge @ 10V (nC)
230
Typical Gate to Drain Charge (nC)
60
Typical Gate to Source Charge (nC)
50
Typical Reverse Recovery Charge (nC)
210
Typical Input Capacitance @ Vds (pF)
11400@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
900@25V
Minimum Gate Threshold Voltage (V)
1
Typical Output Capacitance (pF)
1200
Maximum Power Dissipation (mW)
3750
Typical Fall Time (ns)
50
Typical Rise Time (ns)
25
Typical Turn-Off Delay Time (ns)
110
Typical Turn-On Delay Time (ns)
20
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
175
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
5.5@10V|7@4.5V
Maximum Power Dissipation on PCB @ TC=25°C (W)
3.75
Maximum Pulsed Drain Current @ TC=25°C (A)
240
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
40
Typical Diode Forward Voltage (V)
1
Typical Gate Plateau Voltage (V)
4.3
Typical Reverse Recovery Time (ns)
91
Maximum Diode Forward Voltage (V)
1.5
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
4.83(Max)
Package Width
9.65(Max)
Package Length
10.41(Max)
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
D2PAK
Pin Count
3
Lead Shape
Gull-wing