Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
COMPONENTS
SVHC
Yes
SVHC Exceeds Threshold
Yes
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
800
Maximum Gate-Source Voltage (V)
±30
Maximum Gate Threshold Voltage (V)
5
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
17
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
295@10V
Typical Gate Charge @ Vgs (nC)
70@10V
Typical Gate Charge @ 10V (nC)
70
Typical Gate to Drain Charge (nC)
40
Typical Gate to Source Charge (nC)
13
Typical Reverse Recovery Charge (nC)
9600
Typical Input Capacitance @ Vds (pF)
2070@50V
Typical Reverse Transfer Capacitance @ Vds (pF)
29@50V
Minimum Gate Threshold Voltage (V)
3
Typical Output Capacitance (pF)
210
Maximum Power Dissipation (mW)
190000
Typical Fall Time (ns)
50
Typical Rise Time (ns)
28
Typical Turn-Off Delay Time (ns)
96
Typical Turn-On Delay Time (ns)
18
Minimum Operating Temperature (°C)
-65
Maximum Operating Temperature (°C)
150
Supplier Temperature Grade
Industrial
Packaging
Tube
Maximum Pulsed Drain Current @ TC=25°C (A)
68
Typical Reverse Recovery Time (ns)
618
Maximum Diode Forward Voltage (V)
1.6
Typical Gate Threshold Voltage (V)
4
Maximum Positive Gate-Source Voltage (V)
30
Mounting
Through Hole
Package Height
20.15(Max) mm
Package Width
5.15(Max) mm
Package Length
15.75(Max) mm
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-247
Pin Count
3
Lead Shape
Through Hole