MOSFETs

STLD200N4F6AG

Trans MOSFET N-CH 40V 120A Automotive AEC-Q101 8-Pin Power Flat EP T/R

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant with Exemption

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  8541.29.00.55

• SVHC

  Yes

• SVHC Exceeds Threshold

  Yes

• Automotive

  Yes

• PPAP

  Unknown

• Category

  Power MOSFET

• Configuration

  Single Quad Drain Triple Source

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  1

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3.5

• Operating Junction Temperature (°C)

  -55 to 175

• Maximum Continuous Drain Current (A)

  120

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  1.5@10V

• Typical Gate Charge @ Vgs (nC)

  172@10V

• Typical Gate Charge @ 10V (nC)

  172

• Typical Input Capacitance @ Vds (pF)

  10700@10V

• Minimum Gate Threshold Voltage (V)

  2.5

• Typical Output Capacitance (pF)

  1530

• Maximum Power Dissipation (mW)

  158000

• Typical Fall Time (ns)

  410

• Typical Rise Time (ns)

  440

• Typical Turn-Off Delay Time (ns)

  600

• Typical Turn-On Delay Time (ns)

  150

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Automotive

• Packaging

  Tape and Reel

• Maximum Positive Gate-Source Voltage (V)

  20

• Maximum Pulsed Drain Current @ TC=25°C (A)

  480

• Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

  31.3

• Maximum Diode Forward Voltage (V)

  1.2

• Mounting

  Surface Mount

• Package Height

  0.71

• Package Width

  6

• Package Length

  5

• PCB changed

  8

• Supplier Package

  Power Flat EP

• Pin Count

  8

• Lead Shape

  No Lead