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STL12P6F6|STMICRO|simage
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MOSFETs

STL12P6F6

Trans MOSFET P-CH 60V 12A 8-Pin Power Flat EP T/R

STMicroelectronics
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    12
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    160@10V
  • Typical Gate Charge @ Vgs (nC)
    6.4@10V
  • Typical Gate Charge @ 10V (nC)
    6.4
  • Typical Input Capacitance @ Vds (pF)
    340@48V
  • Maximum Power Dissipation (mW)
    75000
  • Typical Fall Time (ns)
    3.7
  • Typical Rise Time (ns)
    5.3
  • Typical Turn-Off Delay Time (ns)
    14
  • Typical Turn-On Delay Time (ns)
    6.4
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.95(Max)
  • PCB changed
    8
  • Supplier Package
    Power Flat EP
  • Pin Count
    8
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources