IGBT Chip

STGWT20H65FB

Trans IGBT Chip N-CH 650V 40A 168W 3-Pin(3+Tab) TO-3P Tube

STMicroelectronics

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.21.00.95

• Automotive

  No

• PPAP

  No

• Technology

  Field Stop|Trench

• Channel Type

  N

• Configuration

  Single

• Maximum Gate Emitter Voltage (V)

  ±20

• Maximum Collector-Emitter Voltage (V)

  650

• Typical Collector-Emitter Saturation Voltage (V)

  1.55

• Maximum Continuous DC Collector Current (A)

  40

• Maximum Gate Emitter Leakage Current (uA)

  0.25

• Maximum Power Dissipation (mW)

  168

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  175

• Supplier Temperature Grade

  Industrial

• Packaging

  Tube

• Mounting

  Through Hole

• Package Height

  18.7 mm

• Package Width

  4.8 mm

• Package Length

  15.6 mm

• PCB changed

  3

• Tab

  Tab

• Standard Package Name

  TO

• Supplier Package

  TO-3P

• Pin Count

  3

• Lead Shape

  Through Hole