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MOSFETs

STB9NK80Z

Trans MOSFET N-CH 800V 5.2A Automotive 3-Pin(2+Tab) D2PAK T/R

STMicroelectronics
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    4.5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    5.2
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    1800@10V
  • Typical Gate Charge @ Vgs (nC)
    40@10V
  • Typical Gate Charge @ 10V (nC)
    40
  • Typical Input Capacitance @ Vds (pF)
    1138@25V
  • Minimum Gate Threshold Voltage (V)
    3
  • Typical Output Capacitance (pF)
    122
  • Maximum Power Dissipation (mW)
    125000
  • Typical Fall Time (ns)
    22
  • Typical Rise Time (ns)
    12
  • Typical Turn-Off Delay Time (ns)
    45
  • Typical Turn-On Delay Time (ns)
    20
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Maximum Positive Gate-Source Voltage (V)
    30
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    20.8
  • Maximum Diode Forward Voltage (V)
    1.6
  • Mounting
    Surface Mount
  • Package Height
    4.6(Max) mm
  • Package Width
    9.35(Max) mm
  • Package Length
    10.4(Max) mm
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources