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RF FETs

STAC1011-500

Trans RF MOSFET N-CH 110V 5-Pin STAC780F Loose

STMicroelectronics
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Configuration
    Dual Common Source
  • Type
    MOSFET
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    110
  • Maximum Gate-Source Voltage (V)
    10
  • Maximum Gate Threshold Voltage (V)
    3
  • Maximum VSWR
    10
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    1
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    2
  • Typical Output Capacitance @ Vds (pF)
    44
  • Maximum Output Power (W)
    500(Typ)
  • Typical Power Gain (dB)
    16
  • Maximum Frequency (MHz)
    1200
  • Minimum Frequency (MHz)
    700
  • Typical Drain Efficiency (%)
    59
  • Minimum Operating Temperature (°C)
    -65
  • Maximum Operating Temperature (°C)
    200
  • Packaging
    Loose
  • Supplier Temperature Grade
    Industrial
  • Mounting
    Surface Mount
  • Package Height
    4.32(Max)
  • Package Width
    9.91(Max)
  • Package Length
    20.7(Max)
  • PCB changed
    5
  • Supplier Package
    STAC780F
  • Pin Count
    5
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources