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SSM6N48FULF|TOSHIBA|simage
SSM6N48FULF|TOSHIBA|limage
MOSFETs

SSM6N48FU,LF

Trans MOSFET N-CH Si 30V 0.1A 6-Pin US T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    0.1
  • Maximum Drain-Source Resistance (mOhm)
    3200@4V
  • Typical Input Capacitance @ Vds (pF)
    15.1@3V
  • Maximum Power Dissipation (mW)
    300
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9 mm
  • Package Width
    1.25 mm
  • Package Length
    2 mm
  • PCB changed
    6
  • Supplier Package
    US
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources