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SSM6N43FULF|TOSHIBA|simage
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MOSFETs

SSM6N43FU,LF

Trans MOSFET N-CH Si 20V 0.5A 6-Pin US T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±10
  • Maximum Continuous Drain Current (A)
    0.5
  • Maximum Drain-Source Resistance (mOhm)
    630@5V
  • Typical Gate Charge @ Vgs (nC)
    1.23@4V
  • Typical Input Capacitance @ Vds (pF)
    46@10V
  • Maximum Power Dissipation (mW)
    200
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.9
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    6
  • Supplier Package
    US
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources