MOSFETs

SSM6N35FE,LM

Trans MOSFET N-CH Si 20V 0.18A 6-Pin ES T/R

Toshiba

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  NRND

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Small Signal

• Material

  Si

• Configuration

  Dual

• Channel Mode

  Enhancement

• Channel Type

  N

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  20

• Maximum Gate-Source Voltage (V)

  ±10

• Maximum Continuous Drain Current (A)

  0.18

• Maximum Drain-Source Resistance (mOhm)

  3000@4V

• Typical Input Capacitance @ Vds (pF)

  9.5@3V

• Maximum Power Dissipation (mW)

  150

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Mounting

  Surface Mount

• Package Width

  1.2

• Package Length

  1.6

• PCB changed

  6

• Supplier Package

  ES

• Pin Count

  6