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SSM6L39TULF|TOSHIBA|limage
SSM6L39TULF|TOSHIBA|simage
MOSFETs

SSM6L39TU,LF

Trans MOSFET N/P-CH Si 20V 1.6A/1.5A 6-Pin UF T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.21.00.95
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N|P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±10@N Channel|±8@P Channel
  • Maximum Gate Threshold Voltage (V)
    1
  • Maximum Continuous Drain Current (A)
    1.6@N Channel|1.5@P Channel
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    119@4V@N Channel|213@4V@P Channel
  • Typical Gate Charge @ Vgs (nC)
    7.5@4V@N Channel|6.4@4V@P Channel
  • Typical Input Capacitance @ Vds (pF)
    260@10V@N Channel|250@10V@P Channel
  • Maximum Power Dissipation (mW)
    500
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.7
  • Package Width
    1.7
  • Package Length
    2
  • PCB changed
    6
  • Supplier Package
    UF
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources