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SSM6L35FELM|TOSHIBA|limage
SSM6L35FELM|TOSHIBA|simage
MOSFETs

SSM6L35FE,LM

Trans MOSFET N/P-CH Si 20V 0.18A/0.1A 6-Pin ES T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    8541.21.00.95
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    P|N
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±10
  • Maximum Continuous Drain Current (A)
    0.1@P Channel|0.18@N Channel
  • Maximum Drain-Source Resistance (mOhm)
    8000@4V@P Channel|3000@4V@N Channel
  • Typical Input Capacitance @ Vds (pF)
    12.2@3V@Q2|9.5@3V@Q1
  • Maximum Power Dissipation (mW)
    150
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    1.2
  • Package Length
    1.6
  • PCB changed
    6
  • Supplier Package
    ES
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources