Arrow Electronic Components Online
SSM6J771GLF|TOSHIBA|simage
SSM6J771GLF|TOSHIBA|limage
MOSFETs

SSM6J771G,LF

Trans MOSFET P-CH Si 20V 5A 6-Pin WCSP-C T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single Dual Drain Triple Source
  • Process Technology
    U-MOS VI
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Gate Threshold Voltage (V)
    1.2
  • Maximum Continuous Drain Current (A)
    5
  • Maximum Gate-Source Leakage Current (nA)
    1000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    31@8.5V
  • Typical Gate Charge @ Vgs (nC)
    9.8@4.5V
  • Typical Input Capacitance @ Vds (pF)
    870@10V
  • Maximum Power Dissipation (mW)
    5000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.3
  • Package Width
    1
  • Package Length
    1.5
  • PCB changed
    6
  • Standard Package Name
    CSP
  • Supplier Package
    WCSP-C
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources