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SSM6H19NULFT|TOSHIBA|simage
SSM6H19NULFT|TOSHIBA|limage
MOSFETs

SSM6H19NU,LF(T

Trans MOSFET N-CH Si 40V 2A 6-Pin UDFN EP T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    40
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Gate Threshold Voltage (V)
    1.2
  • Maximum Continuous Drain Current (A)
    2
  • Maximum Gate-Source Leakage Current (nA)
    10
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    198@4.5V
  • Typical Gate Charge @ Vgs (nC)
    1.1@4.2V|1@3.6V|0.75@2.5V
  • Typical Input Capacitance @ Vds (pF)
    130
  • Maximum Power Dissipation (mW)
    2000
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    2 mm
  • Package Length
    2 mm
  • PCB changed
    6
  • Standard Package Name
    DFN
  • Supplier Package
    UDFN EP
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources