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SSM3K36MFVL3FT|TOSHIBA|simage
SSM3K36MFVL3FT|TOSHIBA|limage
MOSFETs

SSM3K36MFV,L3F(T

Trans MOSFET N-CH Si 20V 0.5A 3-Pin VESM T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±10
  • Maximum Continuous Drain Current (A)
    0.5
  • Maximum Drain-Source Resistance (mOhm)
    630@5V
  • Typical Gate Charge @ Vgs (nC)
    1.23@4V
  • Typical Input Capacitance @ Vds (pF)
    46@10V
  • Maximum Power Dissipation (mW)
    150
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    0.8
  • Package Length
    1.2
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    VESM
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources