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SSM3K341RLFT|TOSHIBA|simage
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MOSFETs

SSM3K341R,LF(T

Trans MOSFET N-CH Si 60V 6A 3-Pin SOT-23F T/R Automotive AEC-Q101

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum Continuous Drain Current (A)
    6
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    36@10V
  • Typical Gate Charge @ Vgs (nC)
    9.3@10V
  • Typical Gate Charge @ 10V (nC)
    9.3
  • Typical Gate to Drain Charge (nC)
    2
  • Typical Gate to Source Charge (nC)
    1.8
  • Typical Input Capacitance @ Vds (pF)
    550@10V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    35@10V
  • Minimum Gate Threshold Voltage (V)
    1.5
  • Maximum Power Dissipation (mW)
    2400
  • Typical Fall Time (ns)
    6
  • Typical Rise Time (ns)
    48
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    43@4V|36@4.5V|28@10V
  • Maximum Positive Gate-Source Voltage (V)
    20
  • Typical Diode Forward Voltage (V)
    0.9
  • Typical Gate Plateau Voltage (V)
    3.2
  • Maximum Diode Forward Voltage (V)
    1.5
  • Mounting
    Surface Mount
  • Package Width
    1.8
  • Package Length
    2.9
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23F
  • Pin Count
    3
  • Lead Shape
    Flat

Documentation and Resources

Datasheets
Design resources