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SSM3J35CTL3F|TOSHIBA|simage
SSM3J35CTL3F|TOSHIBA|limage
MOSFETs

SSM3J35CT,L3F

Trans MOSFET P-CH Si 20V 0.1A 3-Pin CST T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Small Signal
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±10
  • Maximum Gate Threshold Voltage (V)
    1
  • Maximum Continuous Drain Current (A)
    0.1
  • Maximum Gate-Source Leakage Current (nA)
    10000
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    8000@4V
  • Typical Input Capacitance @ Vds (pF)
    12.2@3V
  • Maximum Power Dissipation (mW)
    100
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Width
    1
  • Package Length
    0.6
  • PCB changed
    3
  • Supplier Package
    CST
  • Pin Count
    3
  • Lead Shape
    No Lead

Documentation and Resources

Datasheets
Design resources