Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
Yes
PPAP
Unknown
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
60
Maximum Gate-Source Voltage (V)
10
Maximum Gate Threshold Voltage (V)
2
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
2
Maximum Gate-Source Leakage Current (nA)
10000
Maximum IDSS (uA)
10
Maximum Drain-Source Resistance (mOhm)
300@10V
Typical Gate Charge @ Vgs (nC)
8.3@10V
Typical Gate Charge @ 10V (nC)
8.3
Typical Gate to Drain Charge (nC)
1.7
Typical Gate to Source Charge (nC)
0.8
Typical Input Capacitance @ Vds (pF)
330@10V
Typical Reverse Transfer Capacitance @ Vds (pF)
25@10V
Minimum Gate Threshold Voltage (V)
0.8
Typical Output Capacitance (pF)
40
Maximum Power Dissipation (mW)
2000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tape and Reel
Typical Drain-Source Resistance @ 25°C (mOhm)
270@4.5V|240@10V|280@4V
Maximum Positive Gate-Source Voltage (V)
10
Maximum Power Dissipation on PCB @ TC=25°C (W)
2
Maximum Pulsed Drain Current @ TC=25°C (A)
6
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
2.5
Maximum Diode Forward Voltage (V)
1.2
Mounting
Surface Mount
Package Width
1.8
Package Length
2.9
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23F
Pin Count
3
Lead Shape
Flat