Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Material
Si
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
30
Maximum Gate-Source Voltage (V)
±12
Maximum Gate Threshold Voltage (V)
1.2
Operating Junction Temperature (°C)
150
Maximum Continuous Drain Current (A)
6
Maximum Gate-Source Leakage Current (nA)
1000
Maximum IDSS (uA)
1
Maximum Drain-Source Resistance (mOhm)
42@10V
Typical Gate Charge @ Vgs (nC)
8.2@4.5V
Typical Gate to Drain Charge (nC)
2.2
Typical Gate to Source Charge (nC)
1.1
Typical Input Capacitance @ Vds (pF)
560@15V
Typical Reverse Transfer Capacitance @ Vds (pF)
65@15V
Minimum Gate Threshold Voltage (V)
0.5
Typical Output Capacitance (pF)
80
Maximum Power Dissipation (mW)
1000
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Typical Drain-Source Resistance @ 25°C (mOhm)
36@10V|42.5@4.5V|76.5@1.8V|57.5@2.5V
Maximum Positive Gate-Source Voltage (V)
12
Maximum Power Dissipation on PCB @ TC=25°C (W)
1
Maximum Pulsed Drain Current @ TC=25°C (A)
24
Typical Diode Forward Voltage (V)
0.9
Typical Gate Plateau Voltage (V)
1.8
Maximum Diode Forward Voltage (V)
1.2
Mounting
Surface Mount
Package Width
1.8 mm
Package Length
2.9 mm
PCB changed
3
Standard Package Name
SOT
Supplier Package
SOT-23F
Pin Count
3
Lead Shape
Flat