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SSM3J325FLF|TOSHIBA|simage
SSM3J325FLF|TOSHIBA|limage
MOSFETs

SSM3J325F,LF

Trans MOSFET P-CH Si 20V 2A 3-Pin S-Mini T/R

Toshiba
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Material
    Si
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    20
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Continuous Drain Current (A)
    2
  • Maximum Drain-Source Resistance (mOhm)
    150@4.5V
  • Typical Gate Charge @ Vgs (nC)
    4.6@4.5V
  • Typical Input Capacitance @ Vds (pF)
    270@10V
  • Maximum Power Dissipation (mW)
    600
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.1
  • Package Width
    1.5
  • Package Length
    2.9
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    S-Mini
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources