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SQ3410EVT1GE3|VISHAY|simage
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MOSFETs

SQ3410EV-T1_GE3

Trans MOSFET N-CH 30V 8A 6-Pin TSOP T/R Automotive AEC-Q101

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    EA
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain
  • Process Technology
    1500nm
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    2.5
  • Maximum Continuous Drain Current (A)
    8
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    17.5@10V
  • Typical Gate Charge @ Vgs (nC)
    14@10V
  • Typical Gate Charge @ 10V (nC)
    14
  • Typical Input Capacitance @ Vds (pF)
    804@15V
  • Maximum Power Dissipation (mW)
    5000
  • Typical Fall Time (ns)
    7
  • Typical Rise Time (ns)
    12
  • Typical Turn-Off Delay Time (ns)
    20
  • Typical Turn-On Delay Time (ns)
    9
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.65
  • Package Length
    3.05
  • PCB changed
    6
  • Standard Package Name
    SO
  • Supplier Package
    TSOP
  • Pin Count
    6

Documentation and Resources

Datasheets
Design resources