Arrow Electronic Components Online
SPP08N80C3XKSA1|INFINEON|simage
SPP08N80C3XKSA1|INFINEON|limage
MOSFETs

SPP08N80C3XKSA1

Trans MOSFET N-CH 800V 8A 3-Pin(3+Tab) TO-220AB Tube

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    800
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Gate Threshold Voltage (V)
    3.9
  • Maximum Continuous Drain Current (A)
    8
  • Maximum Drain-Source Resistance (mOhm)
    650@10V
  • Typical Gate Charge @ Vgs (nC)
    40@10V
  • Typical Gate Charge @ 10V (nC)
    40
  • Typical Input Capacitance @ Vds (pF)
    1100@100V
  • Maximum Power Dissipation (mW)
    104000
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    15
  • Typical Turn-Off Delay Time (ns)
    65
  • Typical Turn-On Delay Time (ns)
    25
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tube
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    560@10V
  • Maximum Pulsed Drain Current @ TC=25°C (A)
    24
  • Mounting
    Through Hole
  • Package Height
    9.25 mm
  • Package Width
    4.4 mm
  • Package Length
    10 mm
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220AB
  • Pin Count
    3
  • Lead Shape
    Through Hole

Documentation and Resources

Datasheets
Design resources