Product Technical Specifications
EU RoHS
Compliant
ECCN (US)
EAR99
Part Status
NRND
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
800
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
3.9
Maximum Continuous Drain Current (A)
6
Maximum Drain-Source Resistance (mOhm)
900@10V
Typical Gate Charge @ Vgs (nC)
27@10V
Typical Gate Charge @ 10V (nC)
27
Typical Input Capacitance @ Vds (pF)
785@100V
Maximum Power Dissipation (mW)
83000
Typical Fall Time (ns)
8
Typical Rise Time (ns)
15
Typical Turn-Off Delay Time (ns)
65
Typical Turn-On Delay Time (ns)
25
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Packaging
Tube
Typical Drain-Source Resistance @ 25°C (mOhm)
780@10V
Maximum Pulsed Drain Current @ TC=25°C (A)
18
Mounting
Through Hole
Package Height
9.25
Package Width
4.4
Package Length
10
PCB changed
3
Tab
Tab
Standard Package Name
TO
Supplier Package
TO-220AB
Pin Count
3
Lead Shape
Through Hole