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SPB18P06PGATMA1|INFINEON|simage
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MOSFETs

SPB18P06PGATMA1

Trans MOSFET P-CH 60V 18.7A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101

Infineon Technologies AG
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    COMPONENTS
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    Yes
  • PPAP
    Unknown
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    60
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    18.7
  • Maximum Drain-Source Resistance (mOhm)
    130@10V
  • Typical Gate Charge @ Vgs (nC)
    22@10V
  • Typical Gate Charge @ 10V (nC)
    22
  • Typical Input Capacitance @ Vds (pF)
    690@25V
  • Maximum Power Dissipation (mW)
    81100
  • Typical Fall Time (ns)
    11
  • Typical Rise Time (ns)
    5.8
  • Typical Turn-Off Delay Time (ns)
    24.5
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    175
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    101@10V
  • Mounting
    Surface Mount
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
Order Quantity

Documentation and Resources

Datasheets
Design resources