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SMMBFJ309LT1G|ONSEMI|simage
SMMBFJ309LT1G|ONSEMI|limage
RF FETs

SMMBFJ309LT1G

Trans RF MOSFET N-CH 25V Automotive AEC-Q101 3-Pin SOT-23 T/R

onsemi
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.21.00.95
  • Automotive
    Yes
  • PPAP
    Yes
  • Configuration
    Single
  • Type
    JFET
  • Channel Mode
    Depletion
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    25
  • Maximum Gate-Source Voltage (V)
    25
  • Maximum Gate-Source Leakage Current (nA)
    1
  • Maximum IDSS (uA)
    30000
  • Typical Input Capacitance @ Vds (pF)
    5(Max)@0V
  • Typical Reverse Transfer Capacitance @ Vds (pF)
    2.5(Max)@0V
  • Typical Forward Transconductance (S)
    0.018(Max)
  • Maximum Power Dissipation (mW)
    225
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Supplier Temperature Grade
    Automotive
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    0.94
  • Package Width
    1.3
  • Package Length
    2.9
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing
Order Quantity

Documentation and Resources

Datasheets
Design resources