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SISH112DNT1GE3|VISHAY|limage
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MOSFETs

SISH112DN-T1-GE3

SISH112DN-T1-GE3 Vishay MOSFETs Transistor N-CH 30V 11.3A 8-Pin PowerPAK 1212-S T/R - Arrow.com

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • Part Status
    Active
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Continuous Drain Current (A)
    11.3
  • Maximum Drain-Source Resistance (mOhm)
    7.5@10V
  • Typical Gate Charge @ Vgs (nC)
    18@4.5V
  • Typical Input Capacitance @ Vds (pF)
    2610@15V
  • Maximum Power Dissipation (mW)
    3800
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    10
  • Typical Turn-Off Delay Time (ns)
    65
  • Typical Turn-On Delay Time (ns)
    10
  • Minimum Operating Temperature (°C)
    -50
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel

Documentation and Resources

Datasheets
Design resources