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SIHP052N60EFGE3|VISHAY|simage
SIHP052N60EFGE3|VISHAY|limage
MOSFETs

SIHP052N60EF-GE3

Power MOSFET

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Channel Type
    N
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    5
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Power Dissipation (mW)
    278000
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Through Hole
  • Package Height
    8.79(Max)
  • Package Width
    4.65(Max)
  • Package Length
    10.36(Max)
  • PCB changed
    3
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    TO-220AB
  • Pin Count
    3

Documentation and Resources

Datasheets
Design resources