Product Technical Specifications
EU RoHS
Compliant with Exemption
ECCN (US)
EAR99
Part Status
Active
HTS
8541.29.00.55
Automotive
No
PPAP
No
Category
Power MOSFET
Configuration
Single
Channel Mode
Enhancement
Channel Type
P
Number of Elements per Chip
1
Maximum Drain-Source Voltage (V)
200
Maximum Gate-Source Voltage (V)
±20
Maximum Gate Threshold Voltage (V)
4
Operating Junction Temperature (°C)
-55 to 150
Maximum Continuous Drain Current (A)
3.6
Maximum Gate-Source Leakage Current (nA)
100
Maximum IDSS (uA)
100
Maximum Drain-Source Resistance (mOhm)
1500@10V
Typical Gate Charge @ Vgs (nC)
20(Max)@10V
Typical Gate Charge @ 10V (nC)
20(Max)
Typical Gate to Drain Charge (nC)
11(Max)
Typical Gate to Source Charge (nC)
3.3(Max)
Typical Reverse Recovery Charge (nC)
970
Typical Input Capacitance @ Vds (pF)
340@25V
Typical Reverse Transfer Capacitance @ Vds (pF)
33@25V
Minimum Gate Threshold Voltage (V)
2
Typical Output Capacitance (pF)
110
Maximum Power Dissipation (mW)
2500
Typical Fall Time (ns)
19
Typical Rise Time (ns)
27
Typical Turn-Off Delay Time (ns)
7.3
Typical Turn-On Delay Time (ns)
8.8
Minimum Operating Temperature (°C)
-55
Maximum Operating Temperature (°C)
150
Maximum Power Dissipation on PCB @ TC=25°C (W)
2.5
Maximum Pulsed Drain Current @ TC=25°C (A)
14
Maximum Junction Ambient Thermal Resistance on PCB (°C/W)
50
Typical Gate Plateau Voltage (V)
7.3
Typical Reverse Recovery Time (ns)
150
Maximum Diode Forward Voltage (V)
6.3
Maximum Positive Gate-Source Voltage (V)
20
Mounting
Surface Mount
Package Height
2.29
Package Width
6.1
Package Length
6.54
PCB changed
2
Tab
Tab
Standard Package Name
TO
Supplier Package
DPAK
Pin Count
3