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SIHB33N60EFGE3|VISHAY|simage
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MOSFETs

SIHB33N60EF-GE3

Trans MOSFET N-CH 600V 33A 3-Pin(2+Tab) D2PAK

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant with Exemption
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • SVHC
    Yes
  • SVHC Exceeds Threshold
    Yes
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    600
  • Maximum Gate-Source Voltage (V)
    ±30
  • Maximum Gate Threshold Voltage (V)
    4
  • Maximum Continuous Drain Current (A)
    33
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    98@10V
  • Typical Gate Charge @ Vgs (nC)
    103@10V
  • Typical Gate Charge @ 10V (nC)
    103
  • Typical Input Capacitance @ Vds (pF)
    3454@100V
  • Maximum Power Dissipation (mW)
    278000
  • Typical Fall Time (ns)
    48
  • Typical Rise Time (ns)
    43
  • Typical Turn-Off Delay Time (ns)
    161
  • Typical Turn-On Delay Time (ns)
    28
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    4.83(Max)
  • Package Width
    9.65(Max)
  • Package Length
    10.41(Max)
  • PCB changed
    2
  • Tab
    Tab
  • Standard Package Name
    TO
  • Supplier Package
    D2PAK
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources