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SIDR392DPT1RE3|VISHAY|simage
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MOSFETs

SIDR392DP-T1-RE3

Trans MOSFET N-CH 30V 82A 8-Pin PowerPAK SO-DC EP T/R

Vishay
Datasheets 

Product Technical Specifications
  • ECCN (US)
    EAR99
  • Part Status
    NRND
  • HTS
    EA
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    20
  • Maximum Continuous Drain Current (A)
    82
  • Maximum Drain-Source Resistance (mOhm)
    0.62@10V
  • Typical Gate Charge @ Vgs (nC)
    59.7@4.5V|125@10V
  • Typical Input Capacitance @ Vds (pF)
    9530@15V
  • Maximum Power Dissipation (mW)
    6250
  • Typical Fall Time (ns)
    35
  • Typical Rise Time (ns)
    66
  • Typical Turn-Off Delay Time (ns)
    50
  • Typical Turn-On Delay Time (ns)
    40
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Mounting
    Surface Mount
  • Package Height
    0.54
  • Package Width
    6
  • Package Length
    5
  • PCB changed
    8
  • Supplier Package
    PowerPAK SO-DC EP
  • Pin Count
    8

Documentation and Resources

Datasheets
Design resources