MOSFETs

SI4599DY-T1-GE3

Trans MOSFET N/P-CH 40V 6.8A/5.8A 8-Pin SOIC N T/R

Vishay

Product Technical Specifications

• EU RoHS

  Compliant

• ECCN (US)

  EAR99

• Part Status

  Active

• HTS

  8541.29.00.55

• Automotive

  No

• PPAP

  No

• Category

  Power MOSFET

• Configuration

  Dual Dual Drain

• Process Technology

  0.18um

• Channel Mode

  Enhancement

• Channel Type

  N|P

• Number of Elements per Chip

  2

• Maximum Drain-Source Voltage (V)

  40

• Maximum Gate-Source Voltage (V)

  ±20

• Maximum Gate Threshold Voltage (V)

  3@N Channel|2.5@P Channel

• Operating Junction Temperature (°C)

  -55 to 150

• Maximum Continuous Drain Current (A)

  6.8@N Channel|5.8@P Channel

• Maximum Gate-Source Leakage Current (nA)

  100

• Maximum IDSS (uA)

  1

• Maximum Drain-Source Resistance (mOhm)

  35.5@10V@N Channel|45@10V@P Channel

• Typical Gate Charge @ Vgs (nC)

  11.7@10V|5.3@4.5V@N Channel|25@10V|11.8@4.5V@P Channel

• Typical Gate Charge @ 10V (nC)

  11.7@N Channel|25@P Channel

• Typical Gate to Drain Charge (nC)

  1.7@N Channel|5.2@P Channel

• Typical Gate to Source Charge (nC)

  1.9@N Channel|3@P Channel

• Typical Reverse Recovery Charge (nC)

  14@N Channel|18.5@P Channel

• Typical Input Capacitance @ Vds (pF)

  640@20V@N Channel|970@20V@P Channel

• Typical Reverse Transfer Capacitance @ Vds (pF)

  41@20V@N Channel|95@20V@P Channel

• Minimum Gate Threshold Voltage (V)

  1.4@N Channel|1.2@P Channel

• Typical Output Capacitance (pF)

  73@N Channel|120@P Channel

• Maximum Power Dissipation (mW)

  2000

• Typical Fall Time (ns)

  9|10@N Channel|13@P Channel

• Typical Rise Time (ns)

  10|17@N Channel|12|33@P Channel

• Typical Turn-Off Delay Time (ns)

  15|16@N Channel|30|28@P Channel

• Typical Turn-On Delay Time (ns)

  7|16@N Channel|44@P Channel

• Minimum Operating Temperature (°C)

  -55

• Maximum Operating Temperature (°C)

  150

• Packaging

  Tape and Reel

• Typical Drain-Source Resistance @ 25°C (mOhm)

  35.5@4.5V|29.5@10V@N Channel|50@4.5|37@10V@P Channel

• Maximum Power Dissipation on PCB @ TC=25°C (W)

  2

• Maximum Pulsed Drain Current @ TC=25°C (A)

  20

• Maximum Junction Ambient Thermal Resistance on PCB (°C/W)

  120

• Typical Diode Forward Voltage (V)

  0.78@N Channel|0.76@P Channel

• Typical Gate Plateau Voltage (V)

  3

• Typical Reverse Recovery Time (ns)

  19@N Channel|26@P Channel

• Maximum Diode Forward Voltage (V)

  1.2

• Minimum Gate Resistance (Ohm)

  0.5m@N Channel|1m@P Channel

• Maximum Gate Resistance (Ohm)

  4.5m@N Channel|11m@P Channel

• Maximum Positive Gate-Source Voltage (V)

  20

• Maximum Continuous Drain Current on PCB @ TC=25°C (A)

  5.6@N Channel|4.7@P Channel

• Mounting

  Surface Mount

• Package Height

  1.38

• Package Width

  3.9

• Package Length

  4.9

• PCB changed

  8

• Standard Package Name

  SO

• Supplier Package

  SOIC N

• Pin Count

  8

• Lead Shape

  Gull-wing