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SI4116DYT1GE3|VISHAY|simage
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MOSFETs

SI4116DY-T1-GE3

Trans MOSFET N-CH 25V 18A 8-Pin SOIC N T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single Quad Drain Triple Source
  • Channel Mode
    Enhancement
  • Channel Type
    N
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    25
  • Maximum Gate-Source Voltage (V)
    ±12
  • Maximum Gate Threshold Voltage (V)
    1.4
  • Maximum Continuous Drain Current (A)
    18
  • Maximum Drain-Source Resistance (mOhm)
    8.6@10V
  • Typical Gate Charge @ Vgs (nC)
    17.5@4.5V|37@10V
  • Typical Gate Charge @ 10V (nC)
    37
  • Typical Gate to Drain Charge (nC)
    3.3
  • Typical Gate to Source Charge (nC)
    3.7
  • Typical Reverse Recovery Charge (nC)
    16
  • Typical Input Capacitance @ Vds (pF)
    1925@15V
  • Typical Output Capacitance (pF)
    305
  • Maximum Power Dissipation (mW)
    2500
  • Typical Fall Time (ns)
    15
  • Typical Rise Time (ns)
    11
  • Typical Turn-Off Delay Time (ns)
    50
  • Typical Turn-On Delay Time (ns)
    13
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Typical Drain-Source Resistance @ 25°C (mOhm)
    7.1@10V|7.8@4.5V|9@2.5V
  • Mounting
    Surface Mount
  • Package Height
    1.55(Max)
  • Package Width
    4(Max)
  • Package Length
    5(Max)
  • PCB changed
    8
  • Standard Package Name
    SO
  • Supplier Package
    SOIC N
  • Pin Count
    8
  • Lead Shape
    Gull-wing
Order Quantity

Documentation and Resources

Datasheets
Design resources