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MOSFETs

SI3552DV-T1-GE3

Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Obsolete
  • HTS
    8541.29.00.95
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    N|P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    30
  • Maximum Gate-Source Voltage (V)
    ±20
  • Maximum Continuous Drain Current (A)
    2.5@N Channel|1.8@P Channel
  • Maximum Drain-Source Resistance (mOhm)
    105@10V@N Channel|200@10V@P Channel
  • Typical Gate Charge @ Vgs (nC)
    2.1@5V@N Channel|2.4@5V@P Channel
  • Maximum Power Dissipation (mW)
    1150
  • Typical Fall Time (ns)
    7@P Channel|5@N Channel
  • Typical Rise Time (ns)
    9@N Channel|12@P Channel
  • Typical Turn-Off Delay Time (ns)
    13@N Channel|12@P Channel
  • Typical Turn-On Delay Time (ns)
    7@N Channel|8@P Channel
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.65
  • Package Length
    3.05
  • PCB changed
    6
  • Standard Package Name
    SO
  • Supplier Package
    TSOP
  • Pin Count
    6
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources