Arrow Electronic Components Online
SI2333DDST1GE3|VISHAY|simage
SI2333DDST1GE3|VISHAY|limage
MOSFETs

SI2333DDS-T1-GE3

Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    COMPONENTS
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Single
  • Process Technology
    0.18um
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    1
  • Maximum Drain-Source Voltage (V)
    12
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Gate Threshold Voltage (V)
    1
  • Operating Junction Temperature (°C)
    -55 to 150
  • Maximum Continuous Drain Current (A)
    6
  • Maximum Gate-Source Leakage Current (nA)
    100
  • Maximum IDSS (uA)
    1
  • Maximum Drain-Source Resistance (mOhm)
    28@4.5V
  • Typical Gate Charge @ Vgs (nC)
    14@4.5V|23@8V
  • Typical Input Capacitance @ Vds (pF)
    1275@6V
  • Maximum Power Dissipation (mW)
    1200
  • Typical Fall Time (ns)
    20
  • Typical Rise Time (ns)
    24
  • Typical Turn-Off Delay Time (ns)
    45
  • Typical Turn-On Delay Time (ns)
    26
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1.02(Max)
  • Package Width
    1.4(Max)
  • Package Length
    3.04(Max)
  • PCB changed
    3
  • Standard Package Name
    SOT
  • Supplier Package
    SOT-23
  • Pin Count
    3
  • Lead Shape
    Gull-wing

Documentation and Resources

Datasheets
Design resources