VishaySI2304DDS-T1-GE3MOSFETs

Trans MOSFET N-CH 30V 3.3A 3-Pin SOT-23 T/R

Compared to traditional transistors, SI2304DDS-T1-GE3 power MOSFETs, developed by Vishay, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 1100 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. This N channel MOSFET transistor operates in enhancement mode. This device is made with TrenchFET technology. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.

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Total In Stock: 135,055 parts

Regional Inventory: 132,055

    Total$0.46Price for 1

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      Date Code:
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      Manufacturer Lead Time:
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      • Price: $0.4600
      Spliced leader/trailer tape per EIA standards Leader tape:400mm=15.75'; Trail tape:160mm=6.3' more information
    • Ships in 2 days

      Ships from:
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      Date Code:
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      Manufacturer Lead Time:
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      Country Of origin:
      China
      • In Stock: 55 parts
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      • In Stock: 132,000 parts
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