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SI1965DHT1GE3|VISHAY|simage
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MOSFETs

SI1965DH-T1-GE3

Trans MOSFET P-CH 12V 1.3A 6-Pin SC-70 T/R

Vishay
Datasheets 

Product Technical Specifications
  • EU RoHS
    Compliant
  • ECCN (US)
    EAR99
  • Part Status
    Active
  • HTS
    8541.29.00.55
  • Automotive
    No
  • PPAP
    No
  • Category
    Power MOSFET
  • Configuration
    Dual
  • Channel Mode
    Enhancement
  • Channel Type
    P
  • Number of Elements per Chip
    2
  • Maximum Drain-Source Voltage (V)
    12
  • Maximum Gate-Source Voltage (V)
    ±8
  • Maximum Continuous Drain Current (A)
    1.3
  • Maximum Drain-Source Resistance (mOhm)
    390@4.5V
  • Typical Gate Charge @ Vgs (nC)
    1.7@4.5V|2.8@8V
  • Typical Input Capacitance @ Vds (pF)
    120@6V
  • Typical Output Capacitance (pF)
    41
  • Maximum Power Dissipation (mW)
    740
  • Typical Fall Time (ns)
    10
  • Typical Rise Time (ns)
    27
  • Typical Turn-Off Delay Time (ns)
    15
  • Typical Turn-On Delay Time (ns)
    12
  • Minimum Operating Temperature (°C)
    -55
  • Maximum Operating Temperature (°C)
    150
  • Packaging
    Tape and Reel
  • Mounting
    Surface Mount
  • Package Height
    1(Max)
  • Package Width
    1.25
  • Package Length
    2
  • PCB changed
    6
  • Standard Package Name
    SOT
  • Supplier Package
    SC-70
  • Pin Count
    6
  • Lead Shape
    Gull-wing
Order Quantity

Documentation and Resources

Datasheets
Design resources